Gate stack dielectric degradation of rare-earth oxides grown on high mobility Ge substrates
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چکیده
منابع مشابه
Hole Mobility in Strained Ge / Relaxed SiGe with a High - k / Metal Gate Stack
The need for high speed and density in the modem semiconductor industry requires new channel materials and techniques for improved carrier transport and continuous scaling of the device dimensions. As a material for enhanced hole transport strained-Ge is implemented in this work. High-k dielectric and metal gate stack is used for improved electrostatic control, as an alternative to the unstable...
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ژورنال
عنوان ژورنال: Journal of Applied Physics
سال: 2012
ISSN: 0021-8979,1089-7550
DOI: 10.1063/1.4763478